SENTECH Instruments is a leading supplier of plasma process technology equipment for etching and deposition and thin film metrology instruments based on ellipsometry.
SENTECH Instruments has developed the advanced PTSA (planar triple spiral antenna) inductively coupled plasma source which provides the core plasma technology used in the ICP plasma etcher for low damage and high rate etching and which is used in the ICPECVD low temperature deposition systems. Only recently SENTECH Instruments expanded its ICPECVD processing by ALD and plasma enhanced ALD systems to be able to deposit highly conformal and dense thin metal oxide and metal layers.
SI 500 D Inductively Coupled Plasma Deposition System
The ICP supported plasma deposition system SI 500 D was designed for pilot production, research and development, and for use in universities. It provides excellent performance for silane based deposition processes in Si and III-V semiconductor technology.
Outstanding features of the SI 500 D are the planar inductively coupled plasma (ICP) source and the substrate electrode with helium backside cooling. These features give rise to high quality layers deposited at low temperatures (80 °C to 130 °C), to the effective dry chamber cleaning procedure and the high efficiency in silane use. The substrate electrode accepts wafers of up to 8″ diameter. Pieces can be handled by carrier. The process temperature is controlled between 20 °C and 400 °C.
The SI 500 D is platform for PECVD of SiOx, SiOxNy- or SiNx on single wafers. A proprietary inductively coupled plasma source PTSA 200 (planar triple spiral antenna) generates highly dissociated plasma. It is driven by a 13.56 MHz generator that generates plasma densities up to 5×1011 cm-3 (argon plasma) at a low plasma potential. An automated matching network is integrated into the PTSA 200.
SI 500 Inductively Coupled Plasma Etch System with Loadlock
The inductively coupled plasma etcher SI 500 is designed for small scale production, research and development, and for use in universities. It enables the proportional transfer of mask structures into silicon and further semiconductor materials, into quartz and related materials with high uniformity as well as the fabrication of binary micro-optical structures on substrates up to 8″ size.
Outstanding features of the SI 500 are the planar inductively coupled plasma (ICP) source and the substrate electrode with helium backside cooling and dynamic temperature control, the high conductance vacuum system and the control concept of the system. The SI 500 is operated by SENTECH software in combination with a remote field controller (RFC). A proprietary inductively coupled plasma source PTSA 200 (planar triple spiral antenna) generates highly dissociated plasma. It is driven by a 13.56 MHz generator that generates plasma densities up to 5·1011cm-3 (argon plasma) at a low plasma potential. An automated matching network is integrated.
The substrate electrode accepts substrates of up to 8″ diameter and 9 mm height. Pieces can be handled by carrier. The electrode temperature can be controlled between – 30 °C and + 250 °C. To maintain a low substrate temperature even at high plasma densities, a controlled helium pressure can be applied to the wafer backside. The wafers are mechanically clamped. A second 13.56 MHz generator supplies the power to the substrate electrode for RF biasing. In this way the ion energy and the ion density can be controlled independently. Applying the RF power to the substrate electrode only, the system looks similar to a parallel plate etcher and allows for RIE etching processes.
SI 591 compact RIE Plasma Etcher
The plasma etching system SI 591 compact is designed for modularity and process flexibility in the area of III/V and Si processing. SENTECH’s SI 591 compact is well proven in the most important etching processes of different technologies and can be accommodate a wide variety of etch processes.
The use of well-tested modules in a single wafer reactor in a diode configuration will satisfy all requirements of even demanding etching tasks. According to the specific etching tasks and the required plasma chemistry, different gas systems feed the reactor. The most important parameters of the equipment are controlled automatically.
SI ALD LL Atomic Layer Deposition with Loadlock
The atomic layer deposition system SI ALD LL is designed for small scale production, research and development, and for use in universities. It allows the deposition of ultra-thin films of few nanometers with excellent uniformity and very good conformity to 3D surfaces. Precise control of thickness and film properties is facilitated by adding precursors in separate steps into the vacuum chamber during the process cycle. The characteristics of ALD offer many benefits in semiconductor engineering, MEMS, and other nanotechnology applications.
The SI ALD LL was developed and designed for a wide range of deposition modes and processes using flexible system architecture. It can be upgraded with further precursor lines, plasma source, in-situ monitoring, and many other options. The SI ALD LL enables the thermal and plasma enhanced (optional) deposition of oxides, nitrides, metals, and other materials on different substrate types and sizes.
Single wafers or carriers with a diameter of up to 200 mm are loaded via vacuum loadlock. A pick and place mechanism enables clean and careful handling of the substrates. Programmable purging cycles of the loadlock ensure operator safety and chamber cleanliness. The substrate chuck can be controlled up to 400 °C and the reactor wall up to 150 °C respectively. The temperature range of the substrate electrode can be optionally extended to 500 °C. The precursor cabinet can be equipped with up to 4 heated precursor lines with separate inlets into the reactor. In total 6 precursors can be installed. Programmable heating and purging cycles for the reactor ensure operators safety and chamber cleanliness. Mass flow controllers (MFCs) provide highly constant flow rates of purge and carrier gases. The vacuum system is equipped with a dry pump for reliable low and medium pressure operation.
The SI ALD LL can be optionally equipped with a Real Time Monitor (RTM) for optical on-line diagnostic of the deposition process cycle by cycle.
SE 850 DUV-NIR SENresearch Spectroscopic Ellipsometer
Spectral range: 240nm … 2500nm
The UV / VIS / NIR spectroscopic ellipsometer SE 850 measures thickness and optical parameters of bulk materials, single and multiple layers, interfaces, thin and thick films.
The SE 850 is tailored for high demanding applications like the measurement of thin transparent films on glass, light emitting and semiconducting polymers, multiple layer stacks of semiconducting materials, low-e stacks on window pane and advanced microelectronic applications like SOI, high-k and low-k materials. Anisotropic and non-uniform samples can be analyzed.
The SE 850 is a high performance spectroscopic ellipsometer, based on fast diode array detection in the UV / VIS spectral range and fast interferometer modulated detection in the NIR spectral range. Applying FTIR ellipsometry in the NIR spectral range not only adds speed, high resolution and high signal to noise ratio, but provides automatic wavelength calibration as well. The SE 850 is characterized by both fast data acquisition and full spectral resolution.
SE 400adv Multiple Angle Laser Ellipsometer
The multiple angle laser ellipsometer SE 400adv provides the film thickness and optical constants at the HeNe laser wavelength 632,8 nm with an extraordinary precision and accuracy. The SE400advanced can be utilized to characterize single films, multiple layer stacks and bulk materials (substrates). The function of the SE 400adv is based on ellipsometry as a non-contact, optical reflection measurement technique with polarized laser light.Due to its modern, easy to use, recipe oriented and robust software the SE 400adv fits the requirements of R&D as well as of quality control in production environments. It covers a large variety of applications like microelectronics, III-V semiconductors, biology and life science, display technology, magnetic media, metal processing and much more. High sensitivity over the entire (Ψ,Δ) plane and ultra-low noise detection allow for measuring even non-ideal, stray light causing, rough surfaces as e.g. solar cells.
The Film Thickness Probe FTPadv is a fast and easy to use instrument for the thickness measurement of transparent and semitransparent films on transparent and absorbing substrates. It covers a broad thickness range and can be applied to a high variety of material systems due to the large and extensible material library.
The FTPadv comprises a small box containing the optics and electronics and the operation and analyzing software. Depending on the use with or without microscope fiber, pick-up optics, stabilized light source and fiber sensor holder are provided, respectively.
The principle of the thickness measurement is based on the interference patterns in the reflectivity spectrum of light reflected off a layered sample. Fast algorithms allow performing the optical measurement and the calculation of the film thickness with a high repetition rate. The unique AutoModeling feature allows detecting sample types by fast comparison with a spectrum library.
|Range of measurement
Precision (1 σ)
|30nm … 25μm (without microscope) / 30nm ….20μm (with microscope)
1 nm (typ. for 400 nm SiO2/Si)
0.3 nm (typ. for 400 nm SiO2/Si)
Typical 300 ms
450 … 920 nm